820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2 R. A. Khadar, C. Liu, L. Zhang, P. Xiang, K. Cheng, and E. Matioli

IEEE Electron Device Letters, 39(3), 401 – 404 (2018)

720V/0.35mΩ·cm2 Fully-Vertical GaN-on-Si Power Diodes by Selective Removal of Si substrates and buffer layers Yuhao Zhang, Mengyang Yuan, Nadim Chowdhury, Kai Cheng, and Tomas Palacios

IEEE Electron Device Letters, 39(5), 715-718 (2018)

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance Jun Ma, Catherine Erine, Peng Xiang, Kai Cheng, and Elison Matioli

Appl. Phys. Lett. 113, 242102 (2018)

Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors Ning Xu, Ronghui Hao, Fu Chen, Xiaodong Zhang, Hui Zhang, Peipei Zhang2, Xiaoyu Ding, Liang Song, Guohao Yu, Kai Cheng, Yong Cai and Baoshun Zhang

Appl. Phys. Lett. 113, 152104 (2018)

Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy Tian Li Duan, Ji Sheng Pan, Ning Wang, Kai Cheng & Hong Yu Yu

Nanoscale Research Letters volume 12, 499 (2017)

The Growth Technology of High-Voltage GaN on Silicon Peng Xiang, Liyang Zhang, Kai Cheng

Gallium Nitride Power Devices; Edited By Hongyu Yu, Tianli Duan, Jenny Stanford Publishing

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature Ning Wang, Hui Wang, Xinpeng Lin, Yongle Qi, Tianli Duan, Lingli Jiang, Elina Iervolino, Kai Cheng and Hongyu Yu

AIP Advances 7, 095317 (2017)

A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices Shuxun Lin, Maojun Wang, Fei Sang, Ming Tao, Cheng P. Wen, Bing Xie, Min Yu, Jinyan Wang, Yilong Hao, Wengang Wu, Jun Xu, Kai Cheng, and Bo Shen

IEEE Electron Device Lett. 37, 377 (2016)