3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes with P-GaN Termination Ming Xiao, Yunwei Ma, Kai Cheng, Kai Liu, Andy Xie, Edward Beam, Yu Cao, and Yuhao Zhang

IEEE Electron Device Letters

Realization of regular resonance mode in GaN-based polygonal microdisks on Si Menghan Liu, Peng Chen, Jing Zhou, Ru Xu, Xiaokang Mao, Zili Xie, Xiangqian Xiu, Dunjun Chen, Bin Liu, Ping Han, Yi Shi, Rong Zhang, Youdou Zheng, Kai Cheng, and Liyang Zhang

Journal of Applied Physics 127, 113102 (2020)

p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si Nadim Chowdhury, Jori Lemettinen, Qingyun Xie, Yuhao Zhang, Nitul S. Rajput, Peng Xiang, Kai Cheng, Sami Suihkonen, Han Wui Then and Tomás Palacio

IEEE Electron Device Letters, 40(7), 1036 (2019)

Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance Jun Ma ; Georgios Kampitsis ; Peng Xiang ; Kai Cheng ; Elison Matioli

IEEE Electron Device Letters, 40(2), 275 (2019)

Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-based AlGaN/GaN MIS-HEMT Yongle Qi, Yumeng Zhu, Jiang Zhang, Xinpeng Lin, Kai Cheng, Lingli Jiang, Hongyu Yu

IEEE Transactions on Electron Devices, 65(5), 1759-1764 (2018)

Characterization of 880 V Normally-OFF GaN MOSHEMT on Silicon Substrate Fabricated with a Plasma-Free, Self-Terminated Gate Recess Process Ming Tao, Shaofei Liu, Bing Xie, Cheng P. Wen, Jinyan Wang, Yilong Hao, Wengang Wu, Kai Cheng, Bo Shen, Maojun Wang

IEEE Transactions on Electron Devices, 65(4), 1453-1457 (2018)

Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT Ronghui Hao, Ning Xu, Guohao Yu, Liang Song, Fu Chen, Jie Zhao, Xuguang Deng, Xiang Li, Kai Cheng, Kai Fu, Yong Cai, Xinping Zhang, and Baoshun Zhang

IEEE Transactions on Electron Devices, 65(4), 1314-1320 (2018)

10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current Ronghui Hao, Dongdong Wu, Kai Fu, Liang Song, Fu Chen, Jie Zhao, Zhongkai Du, Bingliang Zhang, Qilong Wang, Guohao Yu, Kai Cheng, Yong Cai, Xinping Zhang, Baoshun Zhang

Electronics Letters, 54 (13), 848 (2018)